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Title Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach
Authors Kumar, Ashutosh
Latzel, Michael
Tessarek, C.
Christiansen, S.
Singh, R.
ORCID
Keywords GaN
Nanorod
Nanomasking
Reactive-ion etching
Cathodoluminescence
Band-edge luminescence
Yellow band luminescence
Type Article
Date of Issue 2013
URI http://essuir.sumdu.edu.ua/handle/123456789/30991
Publisher Сумський державний університет
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Citation Ashutosh Kumar, Michael Latzel, C. Tessarek, et al., J. Nano- Electron. Phys. 5 No 2, 02001 (2013)
Abstract Large thermal mismatch between GaN surface and sapphire results in compressive stress in Gallium Nitride (GaN) layer which degrades the device performance. Nanostructuring the GaN can reduce this stress leading to reduction in Quantum Confined Stark Effect. Aligned GaN nanorods based nanodevices have potential applications in electronics and optoelectronics. This paper describes the fabrication of GaN nanorods using Ni nanomasking and reactive ion etching. The morphology of GaN nanorods was studied by field emission scanning electron microscopy. The optical properties of GaN nanorods were studied by Cathodoluminescence (CL) spectroscopy. CL results revealed the existence of characteristic band-edge luminescence and yellow band luminescence. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/30991
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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