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Title Effect of Substrate Temperature on the Properties of PECVD SiCN Films
Authors Porada, O.K.
Kozak, A.O.
Ivashchenko, V.I
Ivashchenkо, L.A.
Tomila, V.
ORCID
Keywords PECVD
Hexamethyldisilazane
SiCN films
FTIR
Nanoindentation
Type Article
Date of Issue 2014
URI http://essuir.sumdu.edu.ua/handle/123456789/37148
Publisher Sumy State University
License
Citation Proc. NAP 3, 01NTF12 (2014)
Abstract An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films.
Appears in Collections: Наукові видання (ЕлІТ)

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