Examination of Absorption Spectra of Amorphous Silicon in the Infrared Range

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/37219

Or use following links to share this resource in social networks: Recommend this item

Title	Examination of Absorption Spectra of Amorphous Silicon in the Infrared Range
Authors	Mazinov, А.S. Shevchenko, A.I.
Keywords	Polycrystalline and amorphous materials Quantum structure Stoichiometric and structural parameters Band gap Defect centres IR spectrum Hydrogenated silicon Absorption
Type	Article
Date of Issue	2014
URI	http://essuir.sumdu.edu.ua/handle/123456789/37219
Publisher	Sumy State University
License
Citation	Proc. NAP 3, 02NEA02 (2014)
Abstract	The paper discusses the amorphous materials in terms of absorption of electromagnetic infrared radiation (IR) as the integral characteristic of a photoelectric converter. The spectrum obtained experimentally was shown with the consideration of the main absorption peak. The interaction physics was described and the basic characteristics of the main defect levels was defined which strongly influence the absorption of optical radiation.
Appears in Collections:	Наукові видання (ЕлІТ)