|Title||Recombination Losses in Solar Cells Based on n-ZnS(n-CdS) / p-CdTe Heterojunctions|
Opanasiuk, Anatolii Serhiiovych
Nefedchenko, Vasyl Fedorovych
ZnS / CdTe
CdS / CdTe
|Date of Issue||2014|
|Publisher||Sumy State University|
|Citation||Proc. NAP 3, 02NEA06 (2014)|
The recombination losses in ancillary and absorber layers of solar cells based on n-ZnS / p-CdTe and n-CdS / p-CdTe heterojunctions with ITO and ZnO current-collecting frontal contacts were calculated. The effect of recombination losses in solar cells with structure ITO(ZnO) / CdS(ZnS) / CdTe on the short-circuit current (Jsc) and the efficiency (η) of photovoltaic devices at different window layer thickness CdS (ZnS) (50-300 nm) and at invariable of current-collecting layer thickness (200 nm) were investigated. The influence of recombination velocity (S = 107-109 cm/s) on the main features of solar cells was researched. It was established that solar cells with structure ZnO/ZnS/CdTe at the concentration of uncompensated acceptors in absorber layer (Na – Nd) = 1015-1017 cm-3 and at window layer thickness 50 nm at recombination velocity S = 107 cm/s have the highest efficiency values (15.9-16.1 %).
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Наукові видання (ЕлІТ)
|dobrozhan_efficiency.pdf||620,58 kB||Adobe PDF||484|
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