Landauer – Datta – Lundstrom Generalized Transport Model for Nanoelectronics

Abstract

The Landauer – Datta – Lundstrom generalized transport model is briefly summarized. If a band structure is given, the number of conduction modes can be evaluated and, if a model for a mean-free-path for backscattering can be established, then the near-equilibrium thermoelectric transport coefficients can be calculated using the final expressions listed below for 1D, 2D, and 3D resistors in ballistic, quasi-ballistic, and diffusive linear response regimes through Fermi – Dirac integrals when there are differences in both voltage and temperature across the device.