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Title Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon
Authors Krasnov, A.A.
Legotin, S.A.
Omel’chenko, Yu.K.
Didenko, S.I.
Murashev, V.N.
Rabinovich, O.I.
Yurchuk, S.Yu.
Yaromsky, V.P.
Popkova, A.V.
Keywords Betavoltaic effect betavoltaic battery
p-i-n diode
Gettering
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/43189
Publisher Sumy State University
License
Citation Krasnov, A.A. Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon [Текст] / A.A. Krasnov, S.A. Legotin, Yu.K. Omel’chenko et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04004-1.
Abstract It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p-i-n structure is 1 cm2, which is irradiated by the of radionuclide 63Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0.111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The maximum density of output power (Pmax) was 1.52 nW/cm2.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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