Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/43189

Or use following links to share this resource in social networks: Recommend this item

Title	Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon
Authors	Krasnov, A.A. Legotin, S.A. Omel’chenko, Yu.K. Didenko, S.I. Murashev, V.N. Rabinovich, O.I. Yurchuk, S.Yu. Yaromsky, V.P. Popkova, A.V.
Keywords	Betavoltaic effect betavoltaic battery p-i-n diode Gettering
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/43189
Publisher	Sumy State University
License
Citation	Krasnov, A.A. Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon [Текст] / A.A. Krasnov, S.A. Legotin, Yu.K. Omel’chenko et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04004-1.
Abstract	It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p-i-n structure is 1 cm2, which is irradiated by the of radionuclide 63Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0.111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The maximum density of output power (Pmax) was 1.52 nW/cm2.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)