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Title The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply
Authors Urchuk, S.U.
Krasnov, A.A.
Legotin, S.A.
Didenko, S.I.
Murashev, V.N.
Omel’chenko, U.C.
Osipov, U.V.
Rabinovich, O.I.
Popkova, A.V.
Keywords Betavoltaic effect
Beta power source
Betavoltaic battery
p-i-n diode
I-V characteristic simulation
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/43191
Publisher Sumy State University
License
Citation Urchuk, S.U. The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply [Текст] / S.U. Urchuk, A.A. Krasnov, S.A. Legotin et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04005-1.
Abstract In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm – 3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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