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Title The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance
Authors Legotin, S.A.
Murashev, V.N.
Yurchuk, S.Yu.
Yaromskiy, V.P.
Astahov, V.P.
Kuz’mina, K.A.
Rabinovich, O.I.
El’nikov, D.S.
Osipov, U.V.
Krasnov, A.A.
Didenko, S.I.
Keywords Silicon p-i-n structure
Design optimization
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/43210
Publisher Sumy State University
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Citation Legotin, S.A. The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance [Текст] / S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04017-1.
Abstract In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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