Influence of Order of Double Step Implantation of 64Zn+ and 16O+ Ions into Si on Formation of Zinc-containing Nanoparticles

Eidelman, K.B.; Shcherbachev, K.D.; Tabachkova, N.Yu.; Goryachev, A.V.; Migunov, D.M.; Dronova, D.A.

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Title	Influence of Order of Double Step Implantation of 64Zn+ and 16O+ Ions into Si on Formation of Zinc-containing Nanoparticles
Authors	Eidelman, K.B. Shcherbachev, K.D. Tabachkova, N.Yu. Goryachev, A.V. Migunov, D.M. Dronova, D.A.
ORCID
Keywords	Zn nanoparticles Double-step ion implantation Phase formation
Type	Article
Date of Issue	2015
URI	http://essuir.sumdu.edu.ua/handle/123456789/43227
Publisher	Sumy State University
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Citation	Eidelman, K.B. Influence of Order of Double Step Implantation of 64Zn+ and 16O+ Ions into Si on Formation of Zinc-containing Nanoparticles [Текст] / K.B. Eidelman, K.D. Shcherbachev, N.Yu. Tabachkova et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04028-1.
Abstract	This paper presents the research the formation of zinc-containing nanoparticles (NPs) in Si (001) after double-step hot implantation of 64Zn+ and 16O+ ions. High-resolution Transmission Electron Microscopy (HRTEM) and X-ray Diffraction (XRD) methods were used to study a crystal structure of the samples. Depth profiles of implanted impurity atoms were measured by Secondary Ion Mass Spectrometry (SIMS). Zn NPs with a size of 3 up to 50 nm were found in the implanted samples. Zinc-containing NPs with the size of 5-10 nm were found in the surface layer of as-implanted Si substrates. The effect of the order of implantation on structural defects and the impurity atoms depth profiles is established.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)