|Title||Influence of Order of Double Step Implantation of 64Zn+ and 16O+ Ions into Si on Formation of Zinc-containing Nanoparticles|
Double-step ion implantation
|Date of Issue||2015|
|Publisher||Sumy State University|
|Citation||Eidelman, K.B. Influence of Order of Double Step Implantation of 64Zn+ and 16O+ Ions into Si on Formation of Zinc-containing Nanoparticles [Текст] / K.B. Eidelman, K.D. Shcherbachev, N.Yu. Tabachkova et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04028-1.|
This paper presents the research the formation of zinc-containing nanoparticles (NPs) in Si (001) after
double-step hot implantation of 64Zn+ and 16O+ ions. High-resolution Transmission Electron Microscopy
(HRTEM) and X-ray Diffraction (XRD) methods were used to study a crystal structure of the samples.
Depth profiles of implanted impurity atoms were measured by Secondary Ion Mass Spectrometry (SIMS).
Zn NPs with a size of 3 up to 50 nm were found in the implanted samples. Zinc-containing NPs with the
size of 5-10 nm were found in the surface layer of as-implanted Si substrates. The effect of the order of implantation on structural defects and the impurity atoms depth profiles is established.
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|jnep_2015_V7_04028.pdf||453,71 kB||Adobe PDF||921|
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