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Title Heterostructure Active Area Optimization by Simulation
Authors Rabinovich, O.I.
Didenko, S.I.
Legotin, S.A.
Fedorchenko, I.V.
Osipov, U.V.
Keywords Light-emitting diode
InGaN
Simulation
Type Article
Date of Issue 2015
URI http://essuir.sumdu.edu.ua/handle/123456789/43238
Publisher Sumy State University
License
Citation Rabinovich, O.I. Heterostructure Active Area Optimization by Simulation [Текст] / O.I. Rabinovich, S.I. Didenko, S.A. Legotin et al. // Журнал нано- та електронної фізики. — 2015. — Т.7, №4. — 04035-1.
Abstract Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n- GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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