Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/44874

Or use following links to share this resource in social networks: Recommend this item

Title	Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy
Authors	Ayed, H. Béchir, L. Benabdesslem, M. Benslim, N. Mahdjoubi, L. Mohammed-Brahim, T. Hafdallah, A. Aida, M.S.
Keywords	Schottky Diodes Characterisation Polycrystalline silicon Admittance Spectroscopy
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/44874
Publisher	Sumy State University
License
Citation	H. Ayed, L. Béchir, et al., J. Nano- Electron. Phys. 8 No 1, 01038 (2016)
Abstract	In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance – Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)