Formation of the sensing element of the magnetic field sensor based on Cu and Cu

Abstract

To form the sensing elements of the magnetic field sensors based on magneto-resistance effect, it was suggested to use a method of layer condensation in vacuum Co and Cu with the thickness of individual layers from 1 to 20 nm and sequence depending on the functionality of the finished sensitive element. For high-speed digital sensors, it is reasonable to form multilayer nanostructures of a spin-valve “sandwich” type Co(4÷12nm)/Cu(4÷8 nm)/Co(20 nm)/S (S - substrate). Co magneto-rough lower layer is additionally secured by high temperature of substrate TS = 950 K which provides high values of lower layer coercitivity Co. The sensor element based on such a multilayer structure depending on the applied external magnetic field can be located in two states “high” and “low” value of resistance that can provide a stable state of logic “zero” and “unity.”