Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/65698
Or use following links to share this resource in social networks: Recommend this item
Title Analog Behavioral Modeling of Schottky Diode Using Spice
Authors Messaadi, L.
Dibi, Z.
Keywords Silicon carbide
Reverse recovery
Schottky diode
Temperature effect
Modeling
pspice
ABM
Characterization
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/65698
Publisher Sumy State University
License
Citation Messaadi, L. Analog Behavioral Modeling of Schottky Diode Using Spice [Текст] / L. Messaadi, Z. Dibi // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01002. - DOI: 10.21272/jnep.9(1).01002.
Abstract This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Germany Germany
1
Lithuania Lithuania
1
Taiwan Taiwan
76
Ukraine Ukraine
73
United Kingdom United Kingdom
486
United States United States
324
Unknown Country Unknown Country
10
Vietnam Vietnam
973

Downloads

China China
1
Germany Germany
1
Lithuania Lithuania
1
Turkey Turkey
3
Ukraine Ukraine
30
United Kingdom United Kingdom
1
United States United States
325
Unknown Country Unknown Country
4
Vietnam Vietnam
1

Files

File Size Format Downloads
jnep_V9_01002.pdf 700,24 kB Adobe PDF 367

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.