Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/65698
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | Analog Behavioral Modeling of Schottky Diode Using Spice |
Authors |
Messaadi, L.
Dibi, Z. |
ORCID | |
Keywords |
Silicon carbide Reverse recovery Schottky diode Temperature effect Modeling pspice ABM Characterization |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65698 |
Publisher | Sumy State University |
License | |
Citation | Messaadi, L. Analog Behavioral Modeling of Schottky Diode Using Spice [Текст] / L. Messaadi, Z. Dibi // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01002. - DOI: 10.21272/jnep.9(1).01002. |
Abstract |
This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views
Algeria
1
Belgium
1
China
1
Germany
33300315
Ireland
15254
Italy
1
Lithuania
1
Taiwan
76
Ukraine
2571033
United Kingdom
1285760
United States
73044766
Unknown Country
112789215
Vietnam
973
Downloads
Algeria
1
China
33300312
Germany
33300312
Italy
1
Lithuania
1
Turkey
3
Ukraine
7401753
United Kingdom
1
United States
73044764
Unknown Country
4
Vietnam
1
Files
File | Size | Format | Downloads |
---|---|---|---|
jnep_V9_01002.pdf | 700.24 kB | Adobe PDF | 147047153 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.