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Title | Electronics Properties of Monoclinic HfO2 |
Authors |
Abdelkrim, Mostefai
Smail, Berrah Hamza, Abid |
ORCID | |
Keywords |
SiO2 HfO2 DFT aproximation LDA approximation GGA ADF-BAND pseudo-potential (PP) atomic orbitals (AO) slater type orbitals (STO) |
Type | Article |
Date of Issue | 2018 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/71655 |
Publisher | Sumy State University |
License | |
Citation | Abdelkrim, Mostefai Electronics Properties of Monoclinic HfO[2] / M. Abdelkrim, B. Smail, A. Hamza // Журнал нано- та електронної фізики. - 2018. - Т.10, № 6. - 06026. - DOI: 10.21272/jnep.10(6).06026 |
Abstract |
Density functional theory (DFT) is a very successful technique to calculating the properties of manyelectron systems from first principles. The bands structures, charge density and density of state (DOS) of
monoclinic HfO2 are calculated using Pseudo potential (PP) and Atomic Orbitals (AO) method, within the
density functional theory DFT, generalized gradient approximation GGA and local density approximation
LDA. Hafnium oxide (HfO2) is a high-k dielectric (dielectric constant k ~ 25 at 300 K, band gap Eg ≈ 6 eV);
thermally stable up to 700 ◦C. HfO2 is used in semiconductor manufacturing processes where they are
usually used to replace a silicon dioxide gate dielectric. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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