Examination of Absorption Spectra of Amorphous Silicon in the Infrared Range
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Date
2014
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Sumy State University
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Abstract
The paper discusses the amorphous materials in terms of absorption of electromagnetic infrared radiation (IR) as the integral characteristic of a photoelectric converter. The spectrum obtained experimentally was shown with the consideration of the main absorption peak. The interaction physics was described and the basic characteristics of the main defect levels was defined which strongly influence the absorption of optical radiation.
Keywords
Polycrystalline and amorphous materials, Quantum structure, Stoichiometric and structural parameters, Band gap, Defect centres, IR spectrum, Hydrogenated silicon, Absorption
Citation
Proc. NAP 3, 02NEA02 (2014)