Simulation of CIGS thin film solar cells using AMPS-1D
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2011
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Видавництво СумДУ
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Abstract
The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one
dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied
from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of
current-voltage (I-V) characteristics and quantum efficiency (QE).
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22096
Keywords
cigs thin film, тонкая пленка CIGS, тонка плівка CIGS, conversion efficiency, ефективність перетворення, эффективность преобразования
Citation
Simulation of CIGS thin film solar cells using AMPS-1D [Текст] / J.R. Ray, C.J. Panchal, M.S. Desai, U.B. Trivedi // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 747-754.