Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane
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Date
2013
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Sumy State University
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Abstract
Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using native
precursor hexamethyldisilazane with a nitrogen addition. Films were investigated by X-ray diffraction
spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. It is established that all the
films were X-ray amorphous. An increase in nitrogen flow rate leads to increasing the number of Si-N
bonds, which, in turn, promotes the rise of nanohardness and elastic modulus up to 20 GPa and 160 GPa,
respectively. The optimum deposition parameters were established. The films can be recommended as hard
coatings for strengthening cutting tools.
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Keywords
PECVD, Hexamethyldisilazane, SiCN films, FTIR, Nanoindentation
Citation
Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane [Текст] / O.K. Porada, A.O. Kozak, L.A. Ivashchenko et al.
// Nanomaterials: Applications & Properties (NAP-2013) : 3-rd International conference, Alushta, the Crimea, Ukraine, September 16-21, 2013 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No2. - 02FNC11