Доброжан, Олександр АнатолійовичДоброжан, Александр АнатольевичDobrozhan, Oleksandr AnatoliyovychБересток, Таїсія ОлександрівнаБересток, Таисия АлександровнаBerestok, Taisiia OleksandrivnaКурбатов, Денис ІгоровичКурбатов, Денис ИгоревичKurbatov, Denys IhorovychОпанасюк, Анатолій СергійовичОпанасюк, Анатолий СергеевичOpanasiuk, Anatolii SerhiiovychОпанасюк, Надія МиколаївнаОпанасюк, Надежда НиколаевнаOpanasiuk, Nadiia MykolaivnaНефедченко, Василь ФедоровичНефедченко, Василий ФедоровичNefedchenko, Vasyl Fedorovych2014-02-072014-02-072013Optical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe Heterojunctions [Текст] / O.A. Dobrozhan, T.O. Berestok, D.I. Kurbatov, A.S. Opanasyuk, N.M. Opanasyuk, V.F. Nefedchenko // 3rd International Conference “Nanomaterials: Applications & Properties - 2013 (NAP-2013)”. – Alushta, the Crimea, Ukraine, 2013. — С. 04NEA16-1.0000-0002-2754-63670000-0002-1888-39350000-0001-9238-75960000-0002-3698-3788http://essuir.sumdu.edu.ua/handle/123456789/33898The optical reflection and absorption losses in the accessory layers of solar cells based on n-ZnS / p- CdTe and n-CdS / p-CdTe heterojunctions are defined in this work. Aluminum doped zinc oxide is used as the front conductive layer material. It is shown that the replacement of traditional window material (CdS) for a wide-one (ZnS) leads to an increase in accessory solar cells layers transmittance. When the thickness of the window layers is 50 nm, the transmittance using ZnS windows with the wavelength of 380-500 nm is higher in 7-40 % than the corresponding value for CdS. At 300 nm for the same spectral field the difference increases to 8-89 %. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33898encneCdS / CdTe heterojunctionZnS / CdTe heterojunctionOptical lossesReflection coefficientTransmittanceAbsorption coefficientOptical Losses of Thin Solar Cells on the Basis of n-ZnS / p-CdTe and n-CdS / p-CdTe HeterojunctionsTheses