Gomes, U.P.Yadav, Y.K.Chowdhury, S.Ranjan, K.Rathi, S.Biswas, D.2012-08-272012-08-272012U.P. Gomes, Y.K. Yadav, S. Chowdhury, et al., J. Nano-Electron. Phys. 4 No 2, 02009 (2012)http://essuir.sumdu.edu.ua/handle/123456789/27780The increasing challenges for further scaling down of Si CMOS require the study of alternative channel materials. This paper highlights the significance of III-V compound semiconductor materials in order to face the looming fate of Si CMOS technology. The potential advantages of using III-Vs as channel materials for future III-V CMOS is its outstanding transport properties that have been widely accepted in high frequency RF applications. However, many significant challenges in front of III-V digital technology needs to be overcome before III-V CMOS becomes feasible for next generation high speed and low power logic applications. But it may be that this situation is changing given recent progress in the fabrication of high-mobility III-Vs based heterostructure electronic devices for logic applications to fulfill the needs towards the everyday evolving III-V CMOS technology. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27780encneCMOSIII-V MaterialsHEMTLogicDigitalArticle