Zakhvalinskii, V.S.Borisenko, L.V.Aleynikov, A.J.Piljuk, E.A.Goncharov, I.Taran, S.V.2014-01-182014-01-182013V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013)http://essuir.sumdu.edu.ua/handle/123456789/33656Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656encneAtomic force microscopyTransmission electron microscopeSilicon carbideThin filmsArticle