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Title Electrostatics of silicon nano transistor
Authors Singh, Lalit
Tyag, B.P.
ORCID
Keywords оптоэлектроника
оптоелектроніка
optoelectronics
електростатика
электростатика
electrostatics
Type Article
Date of Issue 2011
URI http://essuir.sumdu.edu.ua/handle/123456789/22127
Publisher Видавництво СумДУ
License
Citation Singh, L. Electrostatics of silicon nano transistor [Текст] / L. Singh, B.P. Tyag // Journal of Nano- and Electronic Physics. — 2011. — Vol.3, № 1, Part IV : Proceedings of the International Symposium on Semiconductor Materials and Devices (ISSMD-2011), Vadodara, India, 28-30 January 2011. — P. 808-813.
Abstract Nano Transistor represents a unique system for exploring physical phenomena pertaining to charge transport at the nano scale and is expected to play a critical role in future evolution of electronic and optoelectronic devices. This paper summarizes some of the essential electrostatics of nano Metal Oxide Semiconductor Field effect Transistor (MOSFET) and their electrical properties. Though the general focus of this work is on surface potential yet the first part presents a brief discussion of the independence of charge at the top of the barrier in the channel of MOS Transistor on Drain voltage. The quantum capacitance is discussed at length. The superposition theorem is used, thereafter, to obtain an expression for self consistent potential in the channel. Finally the I-V characteristics of the device are explored using Landauer formalism. The simulated results for a device are observed to represent the realistic behaviour of the device. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22127
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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