Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

Abstract

This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/36255