Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/44855
Title: Simulation and Finite Element Analysis of Electrical Characteristics of Gate-all-Around Junctionless Nanowire Transistors
Authors: Chatterjee, Neel
Pandey, Sujata
Keywords: Nanowire
Multiphysics
Current controllability
Issue Year: 2016
Publisher: Sumy State University
Citation: Neel Chatterjee, Sujata Pandey, J. Nano- Electron. Phys. 8 No 1, 01025 (2016)
Abstract: Gate all around nanowire transistors is one of the widely researched semiconductor devices, which has shown possibility of further miniaturization of semiconductor devices. This structure promises better current controllability and also lowers power consumption. In this paper, Silicon and Indium Antimonide based nanowire transistors have been designed and simulated using Multiphysics simulation software to investigate on its electrical properties. Simulations have been carried out to study band bending, drain current and current density inside the device for changing gate voltages. Further analytical model of the device is developed to explain the physical mechanism behind the operation of the device to support the simulation result.
URI: http://essuir.sumdu.edu.ua/handle/123456789/44855
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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