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Title Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy
Authors Ayed, H.
Béchir, L.
Benabdesslem, M.
Benslim, N.
Mahdjoubi, L.
Mohammed-Brahim, T.
Hafdallah, A.
Aida, M.S.
ORCID
Keywords Schottky Diodes
Characterisation
Polycrystalline silicon
Admittance Spectroscopy
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/44874
Publisher Sumy State University
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Citation H. Ayed, L. Béchir, et al., J. Nano- Electron. Phys. 8 No 1, 01038 (2016)
Abstract In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance – Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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