Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/44874
Title: Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy
Authors: Ayed, H.
Béchir, L.
Benabdesslem, M.
Benslim, N.
Mahdjoubi, L.
Mohammed-Brahim, T.
Hafdallah, A.
Aida, M.S.
Keywords: Schottky Diodes
Characterisation
Polycrystalline silicon
Admittance Spectroscopy
Issue Year: 2016
Publisher: Sumy State University
Citation: H. Ayed, L. Béchir, et al., J. Nano- Electron. Phys. 8 No 1, 01038 (2016)
Abstract: In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance – Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon.
URI: http://essuir.sumdu.edu.ua/handle/123456789/44874
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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