Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/44880
Title: Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad
Authors: Goel, Neha
Pandey, Manoj Kumar
Keywords: Silicon on insulator (SOI)
Poisson’s Equation
Front surface potential
Threshold voltage
Electric field
Drain Current
Issue Year: 2016
Publisher: Sumy State University
Citation: Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 8 No 1, 01041 (2016)
Abstract: In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.
URI: http://essuir.sumdu.edu.ua/handle/123456789/44880
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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