A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor

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Title	A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor
Authors	Kumar, A. Chaudhry, A. Kumar, V. Sharma, V.
ORCID
Keywords	Triple Material Double Gate (TMDG) Junctionless field effect transistor (JLFET) Surface Potential Centre potential
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/49797
Publisher	Sumy State University
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Citation	A. Kumar, A. Chaudhry, V. Kumar, V. Sharma, J. Nano- Electron. Phys. 8 No 4(1), 04042 (2016)
Abstract	In this paper, a two dimensional analytical Surface Potential model for the triple material double gate (TMDG) junctionless-field effect transistor (JLFET) in sub-threshold region has been presented. The effect of source and drain depletion width has also been taken into account. We have solved two-dimensional Poisson’s equation for the Surface Potential. Then the centre potential and the electric field is also obtained. We have calculated the surface potential for different channel lengths. All the modelled results are then compared with the simulated results of the 2D device simulator TCAD.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)