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Please use this identifier to cite or link to this item:http://essuir.sumdu.edu.ua/handle/123456789/65834
Title: Solution Processed AZO Thin Films Prepared from Different Source Materials
Authors: Ullah, S.
Matteis, D.F.
Lucci, M.
Davoli, I.
Keywords: AZO
Solution synthesis
Rapid thermal annealing
Transparent conducting oxides
Issue Year: 2017
Publisher: Sumy State University
Citation: Solution Processed AZO Thin Films Prepared from Different Source Materials [Текст] / S. Ullah, D. F. Matteis, M. Lucci, I. Davoli // Журнал нано- та електронної фізики. - 2017. - Т.9, № 3. - 03010. - DOI: 10.21272/jnep.9(3).03010
Abstract: Aluminum doped Zinc Oxide films were spin-coated from 1 mol% doped precursors obtained from different source materials optimizing post-deposition annealing in controlled atmospheres. AZO films were provided with pre-deposition heating at 500 °C in ambient while post-deposition rapid thermal annealing (RTA) in vacuum and in N2-5%H2 was provided at 400, 500 and 600 °C. Dominant ZnO c-axis oriented AZO films with typical wurtzite crystal structure were obtained. Aluminum nitrate source materials resulted in comparatively higher conductivity AZO films. We conclude post-deposition annealing in controlled environments helped increase oxygen vacancies and enhanced grain growth and crystallinity resulting in increased conductivity. Optical measurements showed an average total transmittance (%T) of about 85 % in the visible for all the films with a direct allowed band gap of about 3.2.
URI: http://essuir.sumdu.edu.ua/handle/123456789/65834
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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