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Title Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate
Authors Neha, Goel
Manoj, Kumar Pandey
ORCID
Keywords Fully Depleted Silicon on insulator (FDSOI)
3D analytical model
Short channel effects (SCE)
Bulk CMOS
Surface potential
Threshold voltage
Drain induced barrier lowering (DIBL)
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/65996
Publisher Sumy State University
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Citation Neha, Goel Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate [Текст] / Neha Goel, Manoj Kumar Pandey // Журнал нано- та електронної фізики. - 2017. - Т.9, № 5. - 05002. - DOI: 10.21272/jnep.9(5).05002.
Abstract Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimensional mathematical modeling is presented in this paper. To the best of our knowledge, when our device is fabricated in nanometer regime, the threshold voltage changes due to various effects. Back gate voltage plays a significant role on the controlling of threshold voltage. Separation of variable is used to solve the Poisson’s three dimensional equation, analytically with suitable boundary conditions for the threshold voltage of double gate SOI MOSFET with the influence of biasing with back gate. In this work, changes in threshold voltage has been calculated and demonstrated that how short channel effects and DIBL can be suppressed with application of Back Gate bias voltage.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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