Skip navigation
Please use this identifier to cite or link to this item:http://essuir.sumdu.edu.ua/handle/123456789/67447
Title: Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode
Authors: Nagornov, Yuri S.
Keywords: charge carriers
betavoltaic structure
silicon diode
equivalent circuit
betavoltaics effect
Issue Year: 2018
Publisher: Sumy State University
Citation: Nagornov, Yuri S. Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode [Текст] / Yuri S. Nagornov // Журнал нано- та електронної фізики. – 2018. – Т.10, № 1. – 01027. - DOI: 10.21272/jnep.10(1).01027.
Abstract: The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the current source from betavoltaics effect, ideal pn diode, shunt and series resistances, and also barrier capacity with charge on it. The model allows to explain that increasing of charge on the surface silicon pn diode must decrease the effectiveness of energy conversion. As example, we showed that the open circuit voltage is decreased during irradiation time from beta source Ni-63 and it rapidly becomes higher after discharging.
URI: http://essuir.sumdu.edu.ua/handle/123456789/67447
Type: Article
Appears in Collections:Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views
Other1
France2
Italy1
Ukraine1
United States1
Downloads
No available statistics


Files in This Item:
File Description SizeFormatDownloads 
Nagornov_jnep_V10_01027.pdf320.39 kBAdobe PDF0Download
Show full item record Recommend this item


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.