Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
Permanent URI for this collectionhttps://devessuir.sumdu.edu.ua/handle/123456789/197
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Item Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D(Sumy State University, 2018) Souilah, O.; Benzair, A.; Dennai, B.; Khachab, H.In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of InGaN tandem solar cells such as photo generation rate, efficiency and recombination rate through the cells. Improvement around of 13 % of PIN tandem solar cell over PN tandem solar cell is observed for low doping concentration (NA = 1016 cm – 3; ND = 1018 cm – 3) and surface recombination (103cm/s). The photo-generated shortcircuit current density (Jsc) and the open-circuit voltage (Voc) of structures under AM 1,5G (one sun) illumination, are simulated for different thickness of intrinsic layer varying from 50 nm to 350 nm.Item Simulation of tunnel junction in cascade solar cell (GaAs/Ge) using AMPS-1D(Sumy State University, 2014) Dennai, B.; Slimane, H.B.; Helmaoui, A.The development of the tunnel junction interconnect was key the first two-terminal monolithic, multijunction solar cell development. This paper describes simulation for the tunnel junction (GaAs) between top cell (GaAs) and bottom cell (Ge). This solar cell cascade was simulated when using one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of the tunnel junction layer was varied from 10 to 50 nm. By varying thickness of tunnel junction layer the simulated device performance was demonstrate in the form of current-voltage(I-V) characteristics and quantum efficiency (QE).