Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
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Item Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique(Sumy State University, 2017) Іващенко, Максим Миколайович; Опанасюк, Анатолій Сергійович; Ivashchenko, Maksym Mykolaiovych; Опанасюк, Анатолий Сергеевич; Иващенко, Максим Николаевич; Opanasiuk, Anatolii Serhiiovych; Бурик, Іван Петрович; Бурик, Иван Петрович; Buryk, Ivan Petrovych; Lutsenko, V.A.; Shevchenko, A.V.Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu films). Moreover, evaluated values of the films optical band gap were in the range of Eg = (2.63-2.69) eV for ZnSe films and Eg = (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors.Item Surfase morphology and optical properties of CdSe films obtained by the close-spaced vacuum sublimation technique(Видавництво СумДУ, 2009) Іващенко, Максим Миколайович; Иващенко, Максим Николаевич; Ivashchenko, Maksym Mykolaiovych; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii Serhiiovych; Starikov, V.V.; Perevertaylo, V.L.Investigation of the surface morphology, growth mechanisms and optical properties of CdSe films obtained by the close-spaced vacuum sublimation (CSVS) technique, which are promising for use as the absorption layers of tandem solar cells and photodetectors, was carried out in the present paper. Measurements of the optical characteristics of the layers were performed by the spectrophotometric analysis method near the “red boundary” of semiconductor photoactivity. Performed investigations allowed to obtain the spectral distributions of the transmission T(λ), reflection R(λ), absorption α(λ), and refraction n(λ) coefficients, and the real ε1(λ) and imaginary ε2(λ) parts of the optical dielectric constant of the samples and to define their dependence on the film deposition temperature. При цитуванні документа, використовуйте посилання http://essuir.sumdu.edu.ua/handle/123456789/9358