Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
Permanent URI for this collectionhttps://devessuir.sumdu.edu.ua/handle/123456789/197
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Item Structure and Electrophysical Properties of Double-component Film Alloys Based on Molybdenum and Iron or Nickel(Sumy State University, 2018) Бурик, Іван Петрович; Бурик, Иван Петрович; Buryk, Ivan Petrovych; Гричановська, Тетяна Михайлівна; Гричановская, Татьяна Михайловна; Hrychanovska, Tetiana Mykhailivna; Подуремне, Дмитро Васильович; Подуремне, Дмитрий Васильевич; Poduremne, Dmytro Vasylovych; Степаненко, Андрій Олександрович; Степаненко, Андрей Александрович; Stepanenko, Andrii OleksandrovychThe study of the structure-phase composition and electrophysical properties of film alloys of molybdenum and nickel or iron were deposited by the method of simultaneous thermo-vacuum condensation was done. In a non-annealing state, the samples remain biphasic. After heat treatment at 750 K in vacuum, the formation of the metastable phases of the fcc-Ni3Mo (lattice parameter a 0.360 nm) and bcc-Fe2Mo (a 0.296 nm) in film alloys based on Ni and Mo was recorded at concentrations of atoms of ferromagnetic metal 75 and 65 at.% respectively Investigation of the thermoresistive properties of films showed that the dispersion of the structure, the admixture phases and the solid phase reactions affect the temperature dependence of the resistivity and the temperature coefficient of resistance. In film alloys, the range of elastic deformation remains greater than several times than for single-layer metal films, while the strain coefficient is practically unchanged.Item Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique(Sumy State University, 2017) Іващенко, Максим Миколайович; Опанасюк, Анатолій Сергійович; Ivashchenko, Maksym Mykolaiovych; Опанасюк, Анатолий Сергеевич; Иващенко, Максим Николаевич; Opanasiuk, Anatolii Serhiiovych; Бурик, Іван Петрович; Бурик, Иван Петрович; Buryk, Ivan Petrovych; Lutsenko, V.A.; Shevchenko, A.V.Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu films). Moreover, evaluated values of the films optical band gap were in the range of Eg = (2.63-2.69) eV for ZnSe films and Eg = (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors.