Наукові роботи студентів, магістрів, аспірантів (ЕлІТ)
Permanent URI for this collectionhttps://devessuir.sumdu.edu.ua/handle/123456789/150
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Item Post-growth treatment of SnxSy thin films(E-MRS (European Materials Research Society), 2016) Косяк, Володимир Володимирович; Косяк, Владимир Владимирович; Kosiak, Volodymyr Volodymyrovych; Возний, Андрій Петрович; Возный, Андрей Петрович; Voznyi, Andrii Petrovych; Onufrijevs, P.; Grase, L.; Vecstaudža, J.; Опанасюк, Анатолій Сергійович; Опанасюк, Анатолий Сергеевич; Opanasiuk, Anatolii Serhiiovych; Medvids, A.; Mezinskis, G.In this study, the effect of post-growth thermal annealing and laser irradiation on phase composition, structural, optical and electrical properties of SnS2 obtained by the close-spaced sublimation on ITO substrates was studied. It was found, by using EDS, XRD and Raman methods that as-grown samples have single phase SnS2 structure and their chemical composition is close to stoichiometric.Item Thermally induced phase transition in SnxSy thin films(E-MRS (European Materials Research Society), 2016) Возний, Андрій Андрійович; Возный, Андрей Андреевич; Voznyi, Andrii Andriiovych; Косяк, Володимир Володимирович; Косяк, Владимир Владимирович; Kosiak, Volodymyr VolodymyrovychPresently, the earth-abundant and non-toxic SnS2 and SnS compounds could be considered as the promising optoelectronic material. This is due the fact that SnS2 has n-type conductivity, high carrier mobility and wide band gap of 2.2 eV. SnS2 films were obtained by the close-spaced vacuum sublimation method.