Періодичні видання СумДУ
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Item Fabrication of Low-Roughness Au/Ti/ SiO2/Si Substrates for Nanopatterning of 16-Mercapto Hexadecanoic Acid (MHA) by Dip-Pen-Nanolithography(Сумський державний університет, 2012) Kumar, A.; Agarwal, P.B.; Gupta, S.K.; Sharma, A.K.; Kumar, D.; Chandra, ShekharSilicon based low-roughness Au/Ti/SiO2/Si substrates were fabricated using standard IC fabrication processes. Evolution of surface roughness during substrate fabrication process was studied. Fabrication process steps, namely, thermal oxidation and e-beam evaporation for ultra-thin Ti(~ 5 nm)/Au(22 nm) films, were optimized to result in surface r.m.s roughness ~ 0.2 m and ~ 1.0 nm, after thermal oxidation and Ti/Au deposition steps respectively. Surface roughness was estimated by atomic force microscope (AFM) imaging and image analysis. Nano-patterning experiments using thiol based 16-MHA molecular-ink on fabricated substrates were carried out, under controlled environment conditions, by dip-pen-nanolithography (DPN) technique. Minimum line-width ~ 60 nm and circular dots radius ~ 175 nm were patterned. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/27794Item Nano-Scale Patterning Of Silicon Nanoparticles On Silicon Substrate By Dip-Pen-Nanolithography(Sumy State University Publishing, 2011) Kumar, A.; Agarwal, P.B.; Sharma, S.; Kumar, D.Dip-Pen Nanolithography technique has been used to write nano-scale patterns of silicon nanoparticles on Si/SiO2 substrate using commercially available silicon nanoparticles suspension as ink (mean diameter 30 nm). Patterning experiments have been carried out under varying process conditions namely, temperature and humidity with varying writing speed. Linewidth of 92 nm has been measured at writing speed of 0.1 μm/sec, which reduced to 54 nm at higher speed of 1.6 μm/sec. Obtained results would be useful for patterning nano-size features of other hard materials (semiconductors and metals) for applications in nanoelectronics and biotechnology. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9522