Факультет електроніки та інформаційних технологій (ЕлІТ)

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    Regularities of Al layer structure formation near phase equilibrium in plasma–condensate system
    (Physics of the Solid State, 2008) Perekrestov, Viacheslav Ivanovych; Перекрестов, Вячеслав Иванович; Перекрестов, Вячеслав Іванович; Korniushchenko, Hanna Serhiivna; Корнющенко, Анна Сергеевна; Корнющенко, Ганна Сергіївна; Kosminska, Yuliia Oleksandrivna; Косминская, Юлия Александровна; Космінська, Юлія Олександрівна
    A fundamentally new technological approach to creating porous metal structures on isotropic substrates during condensation of a reverse diffusion flow in a planar dc magnetron is proposed. The physical foundations of the operation of self-organized sputtering systems are analyzed. Conditions of the formation of main varieties of porous structures, such as weakly coupled micro- and nanocrystals, and three-dimensional labyrinth structures, are found using scanning electron microscopy. It is established that the main prerequisites for the formation of pores are the stationarity of the process and proximity to the phase equilibrium in the plasma–condensate system. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/4100
  • Item
    Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering
    (Technical Physics Letters, 2006) Perekrestov, Viacheslav Ivanovych; Перекрестов, Вячеслав Иванович; Перекрестов, Вячеслав Іванович; Korniushchenko, Hanna Serhiivna; Корнющенко, Анна Сергеевна; Корнющенко, Ганна Сергіївна; Kosminska, Yuliia Oleksandrivna; Косминская, Юлия Александровна; Космінська, Юлія Олександрівна
    A substantially new technological approach is considered, which is based on the self-organized formation of aluminum single crystal layer on isotropic substrates in the course of stationary condensation of reverse diffusion fluxes in a planar dc magnetron. The functional possibilities of self-organized ion sputtering systems are discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/4077