Факультет електроніки та інформаційних технологій (ЕлІТ)
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Item Computer Modelling of Metal Nanoparticles Adsorbed on Graphene(G. V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine, 2022) Хоменко, Олексій Віталійович; Хоменко, Алексей Витальевич; Khomenko, Oleksii Vitaliiovych; Бєсєдіна, Антоніна Анатоліївна; Беседина, Антонина Анатольевна; Biesiedina, Antonina Anatoliivna; Хоменко, Катерина Павлівна; Хоменко, Екатерина Павловна; Khomenko, Kateryna Pavlivna; Chernushchenko, R.R.The influence of deposited Al, Pd, Co, Au, Ni atoms on a single-layer graphene substrate is investigated using computer simulations. The computer modelling of spraying nanoparticles on the basis of molecular dynamics method is implemented using the NVIDIA®CUDATM technique. According to the results of model calculations, the general behaviour of the system is investigated. The experiments are performed to study the sputtering of atoms of different metals under different initial conditions of the system. Based on these sprays, the behaviour at the beginning of the interaction of the deposited atoms with the substrate is analysed. The time dependences of the lateral position of nanoparticles’ centre of mass and the substrate force throughout the experiment for different sprayed materials are compared. The behaviour of total and potential energies, temperature and momentum of the system is studied. As shown, there is a jump in total energy and temperature as well as a change in the behaviour of the momentum and the substrate force when carbon atoms of graphene are reached for all depositions.Item Вплив параметрів магнетронного розпилення на структуру та властивості нанокомпозитних покриттів(Сумський державний університет, 2019) Мілашечкін, О.О.В роботі досліджено нанесення нанокомпозитних покриттів на скляні та сталеві поверхні іонно-асистованим методом магнетронного розпилення. Встановлено залежність зміни структури покриття від зміни параметрів розпилення.Item A structure and physical properties of Ni films in metastabile ststes(Видавництво СумДУ, 2011) Ryabtsev, S.I.; Gusevik, P.S.; Bashev, V.F.; Dotsenko, F.F.; Gudzenko, V.N.; Evdokimov, P.A.There are presented the results of investigations of the influence of deposition rate and pressure of orifice gas on the structure, physical properties and thermal stability of nickel films obtained by the modified method of the three-electrode ion-plasmous sputtering (technique IPS). X-ray analysis and estimation of the size (L) of coherent-scattering regions (CSR)showed that in the as-deposited films which obtained with low energy of sputtered atoms and low deposition rate (~ 85 pm/s) there is formed a mixture of FCC Ni (L = 5 nm), traces of HCP nickel (L = 9 nm) and oxide of nickel NiO. Increase of energy of sputtered atoms by a decrease of pressure of orifice gas from 120 to 53 or 16 mPa leads to the formation at as-deposited films a mixture of phases FCC nickel and traces of oxides. Moreover, almost double increase of deposition rate leads to an increase the size of the CSR on ~20%. The heating of films of Ni with a mixture of FCC and HCP phases to 300-320 °C results in transformation of HCP in FCC. Freshly deposited films with the structure of FCC Ni are undergoing structural changes at heating above 350-450. These changes are linked obviously with the recrystallization. The size of the CSR for FCC Ni is increased almost in 2 times after heating. It is shown that energy of activating (EA) calculated by the method of Kissinger in the case of disintegration of HCP Ni exceeded from EA of beginning of recrystallization almost in three times and attains ~21000 K. In addition, it’s shown that increase of deposition rate brings to rise of activation energy of beginning recrystallization and indicates the formation of more stable structure in the films. Analysis of the demagnetization curves of the films of nickel showed anisotropy of magnetic properties. Hysteresis only is detected in a parallel field to the film of Ni. The coercive force does not exceed 200 A/m. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20782