|Title||Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications|
al doped ZnO
in doped ZnO
ultrasonic spray pyrolysis
|Date of Issue||2018|
|Publisher||Sumy State University|
|Citation||Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications [Текст] / A. Djelloul, Y. Larbah, M. Adnane [et al.] // Журнал нано- та електронної фізики. - 2018. - Т. 10, № 2. - 02036. - DOI: 10.21272/jnep.10(2).02036.|
Zinc oxide (ZnO) is an n-type semiconductor with a large optical gap (3.4 eV) belonging to the transparent
conductive oxides family (TCO). Strongly present as optical window in the chalcopyrite based structures
CIGS and CIS.
The structural, morphological, optical and electrical properties of ZnO thin films deposited onto glass
substrates by ultrasonic spray pyrolysis (USP) technique have been investigated. For comparison and a
better understanding of physical properties of undoped and (Al, In) doped ZnO thin films, a number of
techniques, including XRD, SEM, optical absorption method (UV) and four-point probe technique were
used to characterize the obtained ZnO thin films. Structural analysis shows that all the films were found
to be polycrystalline with a wurtzite structure and show a (1 0 1) preferential growth. Besides, we noted
that the preferred orientation does not depend on the nature of dopant. The band gaps (Eg) varied from
3.35 to 3.37 eV by Al and In dopants.
|Appears in Collections:||
Журнал нано- та електронної фізики (Journal of nano- and electronic physics)
|Djelloul_properties.pdf||564,73 kB||Adobe PDF||12866|
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