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Title Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications
Authors Djelloul, A.
Larbah, Y.
Adnane, M.
Labdelli, B.
Ziane, M.I.
Manseri, A.
Messaoud, A.
Keywords zinc oxide
al doped ZnO
in doped ZnO
ultrasonic spray pyrolysis
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/68419
Publisher Sumy State University
License
Citation Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications [Текст] / A. Djelloul, Y. Larbah, M. Adnane [et al.] // Журнал нано- та електронної фізики. - 2018. - Т. 10, № 2. - 02036. - DOI: 10.21272/jnep.10(2).02036.
Abstract Zinc oxide (ZnO) is an n-type semiconductor with a large optical gap (3.4 eV) belonging to the transparent conductive oxides family (TCO). Strongly present as optical window in the chalcopyrite based structures CIGS and CIS. The structural, morphological, optical and electrical properties of ZnO thin films deposited onto glass substrates by ultrasonic spray pyrolysis (USP) technique have been investigated. For comparison and a better understanding of physical properties of undoped and (Al, In) doped ZnO thin films, a number of techniques, including XRD, SEM, optical absorption method (UV) and four-point probe technique were used to characterize the obtained ZnO thin films. Structural analysis shows that all the films were found to be polycrystalline with a wurtzite structure and show a (1 0 1) preferential growth. Besides, we noted that the preferred orientation does not depend on the nature of dopant. The band gaps (Eg) varied from 3.35 to 3.37 eV by Al and In dopants.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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