Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D
| dc.contributor.author | Souilah, O. | |
| dc.contributor.author | Benzair, A. | |
| dc.contributor.author | Dennai, B. | |
| dc.contributor.author | Khachab, H. | |
| dc.date.accessioned | 2019-01-05T10:14:19Z | |
| dc.date.available | 2019-01-05T10:14:19Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of InGaN tandem solar cells such as photo generation rate, efficiency and recombination rate through the cells. Improvement around of 13 % of PIN tandem solar cell over PN tandem solar cell is observed for low doping concentration (NA = 1016 cm – 3; ND = 1018 cm – 3) and surface recombination (103cm/s). The photo-generated shortcircuit current density (Jsc) and the open-circuit voltage (Voc) of structures under AM 1,5G (one sun) illumination, are simulated for different thickness of intrinsic layer varying from 50 nm to 350 nm. | ru_RU |
| dc.identifier.citation | Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [Текст] / O. Souilah, A. Benzair, B. Dennai, H. Khachab // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04013. - DOI: 10.21272/jnep.10(4).04013. | ru_RU |
| dc.identifier.uri | http://essuir.sumdu.edu.ua/handle/123456789/70909 | |
| dc.language.iso | en | ru_RU |
| dc.publisher | Sumy State University | ru_RU |
| dc.rights.uri | cne | en_US |
| dc.subject | solar cell | ru_RU |
| dc.subject | tandem | ru_RU |
| dc.subject | simulation | ru_RU |
| dc.subject | PIN structure | ru_RU |
| dc.subject | AMPS-1D | ru_RU |
| dc.subject | efficiency | ru_RU |
| dc.subject | InGaN | ru_RU |
| dc.title | Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D | ru_RU |
| dc.type | Article | ru_RU |
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