Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material
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Date
2015
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Sumy State University
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Abstract
The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method
and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the
specific electrical resistivity of material is of metallic type, while below this temperature a semiconductor
conductivity takes place. Within the temperature ΔT ≈ 90 K-35 K interval the electrical conductivity of material
can be described by the variable-range hopping conductivity mechanism. Negative magnetoresistance
was observed at the same temperature interval.
Keywords
Bulk nanograined materials, Hopping conductivity, Magnetoresistance
Citation
O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, J. Nano- Electron. Phys. 7 No 4, 04073 (2015)