Photovoltaic Effect of SnS/CdS Heterostructure

Abstract

Tin sulphide is a promising absorber material for low-cost and earth abundant thin film solar cells. In this regard, we have studied phase composition, structural, and electrical properties of n-CdS/p-SnS heterostructure obtained by the close spaced vacuum sublimation (CSS) method. Surface and cross- sectional morphology of the structure were studied by using of field emission scanning electron microscope (FESEM). Thickness of the layers (450 nm for SnS and 550 nm for CdS) and growth mechanism were determined directly from heterostructure cross- section. Crystal structure and films purity were studied by X-ray diffraction (XRD) and Raman spectroscopy methods. The light current density-voltage (J-V) characteristic showed small photovoltaic effect with an open-circuit voltage (Voc) of 0.058 mV, a short circuit current density (Jsc) of 3.83 mA/cm2, a fill factor (FF) of 0.41 and an efficiency (n) of 0.092 %.