Diode Based on Amorphous SiC
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Date
2013
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Сумський державний університет
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Abstract
Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/33656
Keywords
Atomic force microscopy, Transmission electron microscope, Silicon carbide, Thin films
Citation
V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013)