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Title | Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure |
Authors |
Chenari, H.M.
|
ORCID | |
Keywords |
SnO2 Nanoparticles Mott-Schottky Impedance Spectroscopy |
Type | Conference Papers |
Date of Issue | 2012 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/34827 |
Publisher | Sumy State University |
License | |
Citation | Chenari, H.M. Mott–Schottky Analysis of SnO2 Nanoparticles by Impedance Measurements underUltrahigh Pressure [Текст] / H.M. Chenari // Nanomaterials: Applications & Properties (NAP-2012) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2012. - V.1, No1. - 01PCN13 |
Abstract |
In this study, the SnO2 nanoparticle powders were compacted into a disk shape form of under a ultrahigh pressure up to 49.6 GPa. Complex impedance analysis of nano-SnO2 thick film/electrode system was
studied as a function of applied potential. A calculated Mott– Schottky plot for the film is presented. Both
flat-band potential and donor concentration were estimated from the space charge capacitance at a definite
frequency. The film can be described as an n-type semiconductor with a high concentration of donors.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/34827 |
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File | Size | Format | Downloads |
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princon_2012_1_1_15.pdf | 205,26 kB | Adobe PDF | 1039279012 |
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