Transition Metal Trichalcogenides as Novel Layered Nano Species

Abstract

In search for new materials for nanoelectronics, many efforts have been put into development of chem-istry and physics of graphene, and, more recently, of other inorganic layered compounds having a bandgap (h-BN, MoS2 etc.). Here we introduce a new view on the family of transition metal trichalcogenides MQ3 (M=Ti, Zr, Nb, Ta; Q=S, Se), which were earlier considered as quasi-one-dimensional systems, and demon-strate that they also may be regarded as layered species suitable for exfoliation by a chemical method. Stable, concentrated colloidal dispersions of high-quality crystalline NbS3 and NbSe3 nanoribbons down to mono- and few-layer-thick are prepared by ultrasonic treatment of the bulk compound in several common organic solvents (DMF, NMP, CH3CN, iPrOH, H2O/EtOH). The dispersions and thin films prepared from them by vacuum filtration or spraying are characterized by a set of physical-chemical methods. Current-voltage characteristics of the NbS3 films show that charge carrier mobility is as high as 1200 – 2400 cm2V-1s-1, exceeding that of MoS2 and making NbQ3 promising potential candidates for field-effect transistors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35223