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Title | Dressed Photon-phonon Technology for Ultra Flat Surface |
Authors |
Yatsui, T.
Ohtsu, M. |
ORCID | |
Keywords |
Dressed-photon method Phonon etching method Surface roughness |
Type | Conference Papers |
Date of Issue | 2013 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35264 |
Publisher | Sumy State University |
License | |
Citation | Yatsui, T. Dressed Photon-phonon Technology for Ultra Flat Surface [Текст] / T. Yatsui, M. Ohtsu // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI09 |
Abstract |
A reduction of the surface roughness, Ra, is required in various applications including electronic devic-es and / or optical devices. Although chemical-mechanical polishing (CMP) has been used to flatten the sur-faces, it is generally limited to reducing Ra to about 2 Å because the polishing pad roughness is as large as 10 m, and the polishing-particle diameters in the slurry are as large as 100 nm. We therefore developed a new polishing method, dressed-photon and phonon etching (DPP etching), that uses dressed photon based on an autonomous phonon-assisted process. DPP etching does not use any polishing pad, with which we obtained ultra-flat silica surface with angstrom-scale average roughness as small as Ra of 0.1 nm. Addi-tionally, we succeeded in reduction of the Ra for the three-dimensional structures.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35264 |
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