Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs

Kholevchuk, V.V.; Kladko, V.P.; Kuchuk, A.V.; Lytvyn, P.M.; Matveeva, L.A.; Mitin, V.F.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/35310

Or use following links to share this resource in social networks: Recommend this item

Title	Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs
Authors	Kholevchuk, V.V. Kladko, V.P. Kuchuk, A.V. Lytvyn, P.M. Matveeva, L.A. Mitin, V.F.
ORCID
Keywords	Ge/GaAs High resolution X-ray diffraction Intrinsic stresses
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35310
Publisher	Sumy State University
License
Citation	Study of Structure and Intrinsic Stresses of Ge Thin Films on GaAs [Текст] / V.V. Kholevchuk, V.P. Kladko, A.V. Kuchuk et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No1. - 01PCSI20
Abstract	The effect of film growth rate on the structure and intrinsic stresses of thin (100 nm) Ge films grown on GaAs(100) substrates was investigate by High Resolution X-Ray Diffraction (HRXRD). The Ge films were deposited onto GaAs using thermal evaporation of Ge in the vacuum. It was shown that pseudomor-phic films with good structural quality can be obtained by this growth technique. We found out that the films have biaxial deformations due to coherent interface and Poisson ratio. The films are elastically com-pressed in the interface and stretched in the perpendicular [001] direction. The intrinsic deformations of thin Ge films strongly depended on the deposition rate. Their correlations with surface roughness, electri-cal and optical parameters are discussed. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35310
Appears in Collections:	Наукові видання (ЕлІТ)