Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET

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Title	Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET
Authors	Borzdov, A.V. Borzdov, V.M. Pozdnyakov, D.V. Komarov, F.F.
ORCID
Keywords	Silicon MOSFET Monte Carlo simulation Impact ionization
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35371
Publisher	Sumy State University
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Citation	Influence of Impact Ionization Process on Current-Voltage Characteristics of Nanoscale Silicon n-Channel MOSFET [Текст] / A.V. Borzdov, V.M. Borzdov, D.V. Pozdnyakov, F.F. Komarov // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP10
Abstract	The current-voltage characteristics of nanoscale silicon n-channel MOSFET with 50 nm channel length are calculated in the present study. Both the electron and hole transport are simulated by means of the en-semble Monte Carlo method. The importance of electron impact ionization process in the transistor chan-nel for drain biases higher than 1 V is shown. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35371
Appears in Collections:	Наукові видання (ЕлІТ)