MOCVD Growths of the InAs QD Structures for Mid-IR Emissions

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/35383

Or use following links to share this resource in social networks: Recommend this item

Title	MOCVD Growths of the InAs QD Structures for Mid-IR Emissions
Authors	Xiaohong, Tang Zongyou, Yin
ORCID
Keywords	MOCVD Quantum dot InAs Mid-infrared
Type	Conference Papers
Date of Issue	2013
URI	http://essuir.sumdu.edu.ua/handle/123456789/35383
Publisher	Sumy State University
License
Citation	Xiaohong, Tang MOCVD Growths of the InAs QD Structures for Mid-IR Emissions [Текст] / T. Xiaohong, Y. Zongyou // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP13
Abstract	In this research, InAs quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal-organic chemical vapor deposition. To improve the grown quantum dot’s shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the InxGa1 – xAs matrix layer of the InAs / InxGa1 – xAs / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest  2.35 m measured at 77 K. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35383
Appears in Collections:	Наукові видання (ЕлІТ)