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Title | Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation |
Authors |
Kuchuk, A.
Kladko, V. Lytvyn, P. Stanchu, H. Sobancka, M. Wierzbicka, A. Klosek, K. Zytkiewicz, Z.R. |
ORCID | |
Keywords |
GaN Nanowires Si (111) Crystallographic alignment Nitridation |
Type | Conference Papers |
Date of Issue | 2013 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/35402 |
Publisher | Sumy State University |
License | |
Citation | Correlation between Crystallographic Alignment of Self-induced GaN Nanowires and Features of Si(111) Nitridation [Текст] / A. Kuchuk, V. Kladko, P. Lytvyn et al. // Nanomaterials: Applications & Properties (NAP-2013) : 2-nd International conference, Alushta, the Crimea, September 17-22, 2012 / Edited by: A. Pogrebnjak. - Sumy : Sumy State University, 2013. - V.2, No4. - 04NAESP21 |
Abstract |
Formation and spatial ordering of self-induced GaN nanowires grown by molecular beam epitaxy on a spatially pre-nitridazed Si(111) substrate have been studied. It was found the close correlation between Si substrate nitridation parameters and crystallographic alignment of NWs. Conditions for NWs nucleation and in- plane orientation are predefined by a structural anisotropy of silicon nitride nanolayer. Mechanism of NWs orderly emergence suggested.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35402 |
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