Chemical Vapor Deposition of Graphene on Copper

Abstract

There are several methods for obtaining graphene. They could be divided into three main groups: me-chanical exfoliation, wet chemical methods, chemical vapor deposition (CVD). In this work CVD method was used for synthesis of graphene. The aim of the work was to obtain samples of graphene and to deter-mine the influence of the synthesis parameters. Synthesis of graphene was carried out in thermal reactor under ambient pressure. Methane was used as a precursor gas. Copper foil was used as a substrate. Exper-iments were carried out at different temperatures (970-1010 °С), varying consists of gas mixtures (Ar/He+H2+CH4), different exposition times (5-30 min) and different rates of samples cooling. Synthesized films were analyzed by Raman-spectroscopy method. In our experiments were obtained samples of few-layered graphene. It showed that the parameters of cooling significantly affect the properties of films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/35637