Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/37148
Title: Effect of Substrate Temperature on the Properties of PECVD SiCN Films
Authors: Porada, O.K.
Kozak, A.O.
Ivashchenko, V.I
Ivashchenkо, L.A.
Tomila, V.
Keywords: PECVD
Hexamethyldisilazane
SiCN films
FTIR
Nanoindentation
Issue Year: 2014
Publisher: Sumy State University
Citation: Proc. NAP 3, 01NTF12 (2014)
Abstract: An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films.
URI: http://essuir.sumdu.edu.ua/handle/123456789/37148
Type: Article
Appears in Collections:Наукові видання (ЕлІТ)

Views
Other81
Canada1
China2
Germany4
France1
Japan1
South Korea2
Russia1
Tunisia1
Taiwan4
Ukraine3
United States2
Downloads
Other30
Bulgaria1
China37
Germany2
Japan1
Russia1
Taiwan4
Ukraine3
United States2


Files in This Item:
File Description SizeFormatDownloads 
Porada_ Kozak_ Ivashchenko_ Ivashchenko_ Tomila.pdf719.89 kBAdobe PDF81Download


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.